# An experimental proof that resistance-switching memories are not memristors

@article{Kim2019AnEP, title={An experimental proof that resistance-switching memories are not memristors}, author={Jewoo Kim and Yuriy V. Pershin and Ming Yin and Turin Datta and Massimiliano Di Ventra}, journal={ArXiv}, year={2019}, volume={abs/1909.07238} }

It has been suggested that all resistive-switching memory cells are memristors. The latter are hypothetical, ideal devices whose resistance, as originally formulated, depends only on the net charge that traverses them. Recently, an unambiguous test has been proposed [J. Phys. D: Appl. Phys. {\bf 52}, 01LT01 (2019)] to determine whether a given physical system is indeed a memristor or not. Here, we experimentally apply such a test to both in-house fabricated Cu-SiO2 and commercially available… Expand

#### 10 Citations

Probabilistic Memristive Networks - Part I: Application of a Master Equation to Networks of Binary ReRAM cells

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This paper uses, for the first time, a master equation to analyze the networks composed of probabilistic binary memristors and results are supplemented by results of numerical simulations that extend the findings beyond the case of identical Memristors. Expand

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Reply to arXiv: 2102.11963, An experimental demonstration of the memristor test, Y. V. Pershin, J. Kim, T. Datta, M. Di Ventra, 23 Feb 2021. Does an ideal memristor truly exist?

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A prototype device is developed and experimentally demonstrated that the direct q-φ interaction could be memristive, as predicted by Chua in 1971, and meets three criteria for an ideal memristor: a single-valued, nonlinear, continuously differentiable, and strictly monotonically increasing constitutive φ-q curve. Expand

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This paper experimentally applies a simple and unambiguous test to a current-carrying wire interacting with a magnetic core, which was recently claimed to be a memristor (so-called ‘Φ Memristor’) and demonstrates unambiguously that this ‘ Φ memristors’ is not a mem Bristor: it is simply an inductor with memory. Expand

Capacitive effects can make memristors chaotic

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Abstract In this paper we analyze cycle-to-cycle variations in the dynamics of an abstract second-order system with memory whose response involves both resistive and capacitive components. The… Expand

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This paper uses, for the first time, a master equation to analyze the networks composed of probabilistic binary memristors, and finds analytical solutions of the master equation for the case of identical memristor connected in-series and in-parallel. Expand

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